Figure 4 A schematic band diagram of the Si NC LED with 5.5 periods of SiCN/SiC SLs. A dotted oval in the upper part shows a specific conduction band diagram at the interface between SiCN and SiC layers in the SLs showing the formation of 2-DEG. Conclusions We demonstrate the fabrication of Si NC LED with 5.5 periods of SiCN/SiC SLs. SiCN/SiC SLs at 5.5 periods was designed by considering TGF-beta inhibitor the optical bandgap to form the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with 5.5 periods of SiCN/SiC

SLs was improved. Moreover, light output power and WPE of the LED with 5.5 periods of SiCN/SiC SLs were also enhanced by 50% and 40%, respectively, which were ascribed to the formation of uniform electron sheet and enhancement in electron transport in Si NCs. We show here that the SiCN/SiC SL structure can be used to realize a highly efficient Si NC LED. Acknowledgments This work was supported by the Converging Research Center Program through the Converging Research Headquarter for Human, Cognition and Environment funded by the Ministry of Education, Science and Technology (grant code 2011 K000655). References 1. Ng WL, Lourenço MA, Gwilliam RW, Ledain S, Shao G, Homewood KP:

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