(a) The electric field vector distributions when the applied voltage became 0.9 V from 0.5 V. (b) The electric field vector distributions when the applied voltage became 0.5 V from 0.9 V. In situ assembly and BIX 1294 price photoelectric property measurement The electrodeposited regular PbTe/Pb nanostructure is first jointed into the circuit by using e-beam evaporation, as seen in Figure  4b. The excellent conductive metal molybdenum is used as the electrode material. Then, the ethanol turbid liquid containing Zn x Mn1−x S nanoparticles doped with 1.26 mol% of Mn2+ content is gradually dripped into the PbTe/Pb nanostructure arrays. With the evaporation of ethanol, the capillary force drives the spherical

nanoparticle to flow toward the PbTe/Pb nanostructure surface; www.selleckchem.com/products/SB-202190.html finally, the Zn x Mn1−x S nanoparticle is deposited on the surface [26]. Comparing the changes of current versus voltage (I-V) curves before and after assembling the Zn x Mn1−x S nanoparticles, we study their photoelectric property under the 532-nm wavelength and 1 × 10−3 W/cm2 laser irradiation conditions. Figure  5 shows the schematic illustration of the in situ construction and photoelectric measurement process. Figure

4 The photoelectric performance measurement. (a) The current-voltage characteristics Mocetinostat ic50 of the single PbTe/Pb nanostructure before and after laser irradiation at 300 K a Without light irradiation; b under the 532-nm wavelength, 1 × 10−3 W/cm2 laser irradiation; and c restoration without light irradiation again. (b) The current-voltage characteristics of PbTe/Pb nanostructure arrays before and after assembling the Zn x Mn1−x S nanoparticles at 300 Farnesyltransferase K. The lower

right insert figure gives the optical micrograph of the PbTe/Pb array device with molybdenum electrodes. d Without light irradiation; e under the 532-nm wavelength, 1 × 10−3 W/cm2 laser irradiation; f combined a spot of Zn x Mn1−x S nanoparticles under the 532-nm wavelength, 1 × 10−3 W/cm2 laser irradiation; and g combined sufficient Zn x Mn1−x S nanoparticles under the 532-nm wavelength, 1 × 10−3 W/cm2 laser irradiation. Figure 5 The Schematic illustration of PbTe/Pb-based nanocomposite situ assembly and photoelectric measurement process. (a) The electrodeposited PbTe/Pb nanostructure arrays on a substrate. (b) The circuit connection of PbTe/Pb nanostructure and its electrical performance measurement. (c) The photoelectric performance measurement of individual PbTe/Pb nanostructure. (d) The situ assembly of the PbTe/Pb-based nanocomposite and its photoelectric performance measurement. The electrical measurements are performed by an ultrahigh vacuum system (1 × 10−9 Torr) at 300 K. All of the I-V characteristics under a high bias voltage are nonlinear, as shown in Figure  4. Figure  4a gives the I-V curves of the individual PbTe/Pb nanostructure before and after light irradiation.