Baseline buccal mucosa capillary density, expressed as the mean number of capillaries +/- SD per mm(2) (cpll/mm(2)), was measured with sidestream dark-field imaging after treatment was performed, after 30 and 60 minutes, and then on days 2, 4, 6, 8, and 14. A linear

mixed model was used to examine capillary density over time and a P value of <.05 was BVD-523 inhibitor considered to be statistically significant.

Results. Baseline mucosal capillary density was 19 +/- 2.4 cpll/mm(2). Mucosal capillary density after melphalan infusion after 30 and 60 minutes and on days 2 and 4 showed no statistically significant differences. A decrease in capillary density with statistical significance was observed on days 6 (10 +/- 3.0 cpll/mm(2); P < .01) and 8 (12 +/- 4.9 cpll/mm(2); P < .01). On day 14, capillary density returned to near

baseline value.

Conclusions. High-dose CT alters microvascular structural integrity selleck inhibitor and dysregulates tissue perfusion in the oral mucosa by decreasing the number of perfused submucosal capillaries in the oral mucosa. The findings of this investigation suggest that acute CT toxicity alters oral microcirculation and may be an important mechanism responsible for driving early mucosal barrier disturbances associated with CT-induced OM. (Oral Surg Oral Med Oral Pathol Oral Radiol Endod 2010; 109: 91-97)”
“In this paper, the physical loss mechanisms in boron doped poly-SiGe are analyzed theoretically and experimentally. The phonon find more losses were calculated theoretically for different germanium and doping concentrations. The theoretical analysis showed that Akhiezer damping sets a fundamental lower limit to the internal damping. Calculated limits for

the f x Q due to Akhiezer damping were similar to 1 x 10(14) Hz for SiGe with low Ge content and similar to 2 x 10(13) Hz for SiGe with high Ge content. However, in the experiments it was found that an internal friction loss mechanism limits the maximum achievable f x Q in our material to 3 x 10(12) at a frequency of 130 MHz. Experimentally the loss mechanisms were studied further by preparing SiGe layers with different Ge/H/B content. The acoustical losses were measured by fabricating a micromechanical resonator from the layers. The measurements identified a thermally activated loss mechanism. By studying the microstructure of the SiGe layers, we identified interface defects and interstitial as the most important loss mechanisms. Furthermore, the experiments show that at high frequencies (>130 MHz) the achievable f x Q-products of SiGe are close to the values, which can be achieved with single crystal materials. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3499319]“
“We found evidence of autosomal dominant hereditary transmission of sulcus vocalis.