In particular, Temozolomide purchase Si QD is persistently considered as a candidate for next-generation light emitters in Si photonics

because of its greatly improved internal and external quantum efficiencies [7, 8]. To further improve the device performance, utilization of Si-rich Si-based dielectric materials as Si QDs’ matrices has also been developed [9, 10]. A suitable matrix eFT508 ic50 material for Si QDs is very important for better device performance. We propose to embed Si QDs into a ZnO thin film because ZnO has many desirable features to function as Si QDs’ matrix material, e.g., wide and direct bandgap, high transparency, and highly tunable

electrical properties [11]. Hence, ZnO can serve as the Si QDs’ matrix to achieve bandgap engineering, reduce the optical loss from the matrix’s absorption, and efficiently enhance the carrier transport efficiency for optoelectronic device application. check details The fabrication and fundamental optical properties of the Si QD-embedded ZnO thin films have been reported in our previous works [12, 13]. In this study, improvement of optical transmittance and electrical properties of the Si QD-embedded ZnO thin films is investigated and discussed. Methods The ZnO/Si multilayer (ML) thin films with 20 bilayers are deposited on p-type Si (100) substrates or fused quartzes at room temperature using the radio-frequency (RF) magnetron sputtering

method. The sputtering powers of ZnO and Si are fixed at 75 and 110 W, and the effective thicknesses L-gulonolactone oxidase of each ZnO and Si layer are fixed at 5 and 3 nm, respectively. After deposition, the ZnO/Si ML thin films are annealed at 500°C, 600°C, 700°C, or 800°C for 30 min in N2 environment. For electrical measurements, 100-nm-thick Al and Ni metal layers are deposited on the top and bottom surfaces of devices as electrodes using a thermal coater. The Raman spectra are measured using a 488-nm diode-pumped solid-state laser (HORIBA LabRam HR, HORIBA, Kyoto, Japan). The X-ray diffraction (XRD) patterns are examined by a Bede-D1 X-ray diffractometer with Cu Kα radiation (Bede Scientific, Engelwood, CO, USA). The transmittance spectra are obtained using a UV–vis-NIR spectrophotometer (Hitachi U-4100, Hitachi Ltd., Chiyoda, Tokyo, Japan). The cross-sectional morphologies are observed by a JSM-6500 F field-emission scanning electron microscope (SEM; JEOL Ltd., Akishima, Tokyo, Japan). The current–voltage (I-V) curves are measured using an Agilent E5270B precision measurement mainframe (Agilent Technologies Inc., Santa Clara, CA, USA).