The de-embedding and Pritelivir in vivo the extraction method were first tested for the quartz substrate (fused silica), which is known to have a constant dielectric

permittivity of 3.82 throughout the whole frequency range 1 to 210 GHz [19, 20]. The extraction method is described in detail in [13]. The obtained results are depicted in Figure 3 for the frequency ranges 1 to 40 GHz and 140 to 210 GHz. We can see that the curves show continuity between the two frequency ranges and the extracted values of the permittivity are 3.82 for frequencies in the range 1 to 40 GHz and 3.71 to 3.79 for frequencies in the range 140 to 210 GHz. These results are very close to the

literature value of quartz permittivity (3.82) and give confidence that the de-embedding and the parameter extraction methods are valid. They were thus used to characterize the porous Si layer in the above frequency ranges. Figure 3 Dielectric permittivity of quartz as a function of frequency in frequency ranges 1 to 40 GHz and 140 to 210 GHz. The extracted dielectric permittivity of quartz as a function of frequency using the extraction GSK458 order method described in the text is depicted. A constant value of approximately 3.8 is obtained for the frequency range 1 to 40 GHz and on average 3.76 for the frequency range 140 to 210 GHz. The obtained values are very close to the nominal value of quartz permittivity in the whole frequency range under discussion (3.82). Microscopic models for determining Methamphetamine PSi dielectric

properties Porous Si structure and morphology depend on the electrochemical conditions used for its formation as well as on the starting wafer resistivity. Its dielectric properties are highly dependent on its structure and morphology. There are several works in the literature that correlate the material structure with its dielectric properties. According to [9, 21, 22], the ac electrical transport of porous Si follows two click here mechanisms. The first is limited by the length of the carrier random walk through the fractal structure of the material and is valid in the very low frequency range, while at higher frequencies, the random path is shorter and the hopping length stops to be the critical factor. In that case, conduction is mainly determined by the distance between inhomogeneous areas [22]. The dielectric permittivity of porous Si (ε PSi ) describes the polarization of the atoms and the impurities inside the material. As it is shown in [22], ε PSi depends on frequency only for frequencies <100 Hz. For higher frequencies, its value is saturated and remains constant up to at least 100 kHz. This value is also independent of temperature.