The sense of the stirrer was switched every 1 min After electrop

The sense of the stirrer was switched every 1 min. After electropolishing, the samples were cleaned in water. A first anodization was performed on the electropolished Al surface using 0.3 M oxalic acid (H2C2O4) solution at a temperature of 7°C. The anodization process was carried out in a PVC

cell cooled by a circulating system (Thermo Scientific, Waltham, MA, USA) with continuous stirring, which ensured a stabilized temperature within an accuracy of less than 0.5°C. The working surface area of the samples was 1.4 cm2. A Pt grid was used as a cathode, and the distance between the Histone Methyltransferase inhibitor two electrodes was about 2 cm. The electrochemical process was controlled by a lab-view program that saved the data of current and voltage and the amount of charge flown through the system every 200 ms. The process was carried out at a constant voltage Alpelisib order (V) of 40 V for 20 h. The resulting nanostructure after this first anodization step is a thin film of alumina with disordered pores

at the top but self-ordered pores at the bottom. This alumina film was dissolved by wet chemical etching at 70°C in a solution of chromic and phosphoric acids (0.4 M H3PO4 and 0.2 M H3CrO4), stirred at 300 rpm for 4 h. A number of samples were prepared in order to examine the effect of the applied number of cycles (N C) and of the anodization temperature (T anod). In order to examine the effect of the number of cycles, two types of samples having different N C were fabricated. A detail of the applied anodization voltage to one of the samples is shown in Additional file 1: Figure S1 where Figure S1(a) in Additional file 1 represents the voltage profile of entire anodization process with 50 cycles, while Figure S1(b) in Additional file 1 represents the voltage profile of one cycle. The anodization process www.selleckchem.com/products/YM155.html started at 20 V and it lasted until a charge of 2 C flowed through the system. In this way, a self-ordered layer of vertical pores

was obtained. To obtain the DBR structure, after this anodization at 20 V, the cyclic anodization process started immediately. Each cycle consisted of three phases: (I) a linear increasing ramp from 20 to 50 Janus kinase (JAK) V, at a rate of 0.5 V/s, (II) an interval at 50 V for certain time duration to flow a given charge Q 0 through the system, and (III) a subsequent linear decreasing ramp from 50 to 20 V at 0.1 V/s. The increasing and decreasing ramps were chosen as the fastest possible ramps in order to maintain the continuity of the anodization process. After the cyclic anodization steps finished, a final anodization voltage of 20 V was applied until 2 C of charge flowed through the system. After the anodization, a wet etching to increase pore radius (pore-widening step) was performed with 5 wt.% phosphoric acid (H3PO4) at 35°C. This pore widening was applied for different times, t PW. Samples with N C = 50 and N C = 150 cycles were obtained, with a Q 0 = 0.5 C.

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